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| TN0606 TN0610 Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / RDS(ON) BVDGS (max) 60V 100V ID(ON) (min) 3.0A 3.0A VGS(th) (max) 2.0V 2.0V Order Number / Package TO-92 TN0606N3 TN0610N3 TO-220 TN0606N5 -- 1.5 1.5 MIL visual screening available 7 Low Threshold DMOS Technology These low threshold enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex's well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown. Supertex's vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. Features s Low threshold -- 2.0V max. s High input impedance s Low input capacitance -- 100pF typical s Fast switching speeds s Low on resistance s Free from secondary breakdown s Low input and output leakage s Complementary N- and P-channel devices Applications s Logic level interfaces - ideal for TTL and CMOS s Solid state relays s Battery operated systems s Photo voltaic drives s Analog switches s General purpose line drivers s Telecom switches Package Options Absolute Maximum Ratings Drain-to-Source Voltage Drain-to-Gate Voltage Gate-to-Source Voltage Operating and Storage Temperature Soldering Temperature* * Distance of 1.6 mm from case for 10 seconds. 7-51 BVDSS BVDGS 20V -55C to +150C 300C G DS SGD TO-220 TAB: DRAIN TO-92 Note: 1. See Package Outline section for dimensions TN0606/TN0610 Thermal Characteristics Package TO-92 TO-220 ID (continuous)* 0.8A 3.0A ID (pulsed) 3.2A 4.1A Power Dissipation @ TC = 25C 1W 45W C/W 125 2.7 jc C/W 170 70 ja IDR* 0.8A 3.0A IDRM 3.2A 4.1A * ID (continuous) is limited by max rated Tj. Electrical Characteristics (@ 25C unless otherwise specified) Symbol BVDSS VGS(th) V GS(th) IGSS IDSS Parameter Drain-to-Source Breakdown Voltage Gate Threshold Voltage Change in VGS(th) with Temperature Gate Body Leakage Zero Gate Voltage Drain Current TN0610 TN0606 Min 100 60 0.6 2.0 -4.5 100 10 1.0 ID(ON) ON-State Drain Current 1.2 3.0 2.0 6.7 15 RDS(ON) RDS(ON) GFS CISS COSS CRSS td(ON) tr td(OFF) tf VSD trr Static Drain-to-Source ON-State Resistance Change in RDS(ON) with Temperature Forward Transconductance Input Capacitance Common Source Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Diode Forward Voltage Drop Reverse Recovery Time 0.8 300 0.4 0.5 100 50 10 150 85 35 6 14 16 16 1.8 V ns VGS = 0V, ISD = 1.5A VGS = 0V, ISD = 1.5A ns VDD = 25V ID = 1.5A RGEN = 25 1.5 1.0 2.0 1.5 0.75 %/C V mV/C nA A mA A VGS = VDS, ID = 1mA VGS = VDS, ID = 1mA VGS = 20V, VDS = 0V VGS = 0V, VDS = Max Rating VGS = 0V, VDS = 0.8 Max Rating TA = 125C (note 2) VGS = 5V, VDS = 25V VGS = 10V, VDS = 25V VGS = 3V, ID = 0.25A VGS = 5V, ID = 0.75A VGS = 10V, ID = 0.75A VGS = 10V, ID = 0.75A VDS = 25V, ID = 1.0A VGS = 0V, VDS = 25V f = 1 MHz Typ Max Unit V Conditions VGS = 0V, ID = 1mA Notes: 1. All D.C. parameters 100% tested at 25C unless otherwise stated. (Pulse test: 300s pulse, 2% duty cycle.) 2. All A.C. parameters sample tested. Switching Waveforms and Test Circuit 10V 90% INPUT 0V PULSE GENERATOR Rgen 10% t(ON) t(OFF) tr td(OFF) tF td(ON) VDD 10% 10% INPUT OUTPUT 0V 90% 90% 7-52 pF VDD RL OUTPUT D.U.T. TN0606/TN0610 Typical Performance Curves Output Characteristics 10 10 Saturation Characteristics 8 VGS = 10V 9V 8V 4 7V 6V 2 5V 3V 0 0 10 20 30 40 50 8 ID (amperes) ID (amperes) 6 6 VGS = 10V 9V 8V 4 7V 6V 2 5V 4V 3V 0 1 2 4 6 8 10 VDS (volts) Transconductance vs. Drain Current 1.0 VDS = 25V 0.8 40 50 TO-220 VDS (volts) Power Dissipation vs. Case Temperature 7 GFS (siemens) TA = -55C TA = 25C 0.4 TA = 150C 0.2 PD (watts) 0.6 30 20 10 TO-92 0 1 2 4 6 8 10 0 0 25 50 75 100 125 150 ID (amperes) Maximum Rated Safe Operating Area 10 1.0 TC ( C) Thermal Response Characteristics Thermal Resistance (normalized) 0.8 TO-220 PD = 45W TC = 25C TO-220 (DC) ID (amperes) 1.0 0.6 0.4 0.1 TO-92 (DC) TC = 25C 0.2 TO-92 P D = 1W T C = 25C 0.01 0.1 1 10 0.01 1 10 100 1000 0 0.001 VDS (volts) tp (seconds) 7-53 TN0606/TN0610 Typical Performance Curves BVDSS Variation with Temperature 1.1 5 On-Resistance vs. Drain Current 4 V GS = 5V BVDSS (normalized) RDS(ON) (ohms) 3 1.0 VGS = 10V 2 1 0.9 -50 0 50 100 150 0 0 2 4 6 8 10 Tj ( C) Transfer Characteristics 10 ID (amperes) V(th) and RDS Variation with Temperature 2.0 1.4 1.6 VDS = 25V 8 TA = -55 C ID (amperes) 25 C 6 1.2 1.2 1.0 RDS @ 10V, 0.75A 0.8 4 0.8 0.4 0.6 2 150 C 0 0 2 4 6 8 10 -50 0 50 100 0 150 VGS (volts) Capacitance vs. Drain-to-Source Voltage 200 10 Tj ( C) Gate Drive Dynamic Characteristics f = 1MHz 8 150 VDS = 10V C (picofarads) VGS (volts) CISS 100 6 VDS = 40V 172 pF 4 50 COSS 2 CRSS 0 0 10 20 30 40 0 0 0.5 95 pF 1.0 1.5 2.0 2.5 VDS (volts) QG (nanocoulombs) 7-54 RDS(ON) (normalized) VGS(th) (normalized) V (th)@ 1mA |
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